Microchip高性能可編程振蕩器與硅MEMS技術有何關聯之處?DSC1122BE1-025.0000，Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.
Microchip Technology Inc .是微控制器和模擬半導體的領先供應商，為全球數千種不同的客戶應用提供低風險有源晶振產品開發、更低的總系統成本和更快的上市時間。總部設在亞利桑那州錢德勒，微芯片提供卓越的技術支持以及可靠的交付和質量。

Microchip高性能可編程振蕩器與硅MEMS技術有何關聯之處?DSC1122BE1-025.0000，Microchip晶振公司發布編碼DSC1122BE1-025.0000，DSC1102和DSC1122系列高性能振蕩器利用成熟的硅MEMS技術，在寬電源電壓和溫度范圍內提供出色的抖動和穩定性。通過消除對石英或SAW技術的需求，MEMS振蕩器顯著提高了可靠性并加快了產品開發，同時滿足各種通信、存儲和網絡應用的嚴格時鐘性能標準。DSC1102具有待機特性，當en引腳被拉低時，它可以完全關斷；而對于DSC1122，當en為低電平時，僅輸出禁用。兩款振蕩器均采用工業標準封裝，包括小型3.2毫米x 2.5mm毫米，是標準6引腳LVPECL石英晶體振蕩器的替代產品。

Manufacturer Part Number原廠代碼	Manufacturer品牌	Series型號	Part Status	Type 類型	Frequency 頻率	Voltage - Supply電壓
DSC1121AI1-156.2500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1121AI2-024.5760T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	24.576MHz	2.25 V ~ 3.6 V
DSC1121AI2-200.0000T	Microchip可編程振蕩器	DSC1121	Obsolete	MEMS (Silicon)	200MHz	2.25 V ~ 3.6 V
DSC1121AI5-125.0032T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	125.0032MHz	2.25 V ~ 3.6 V
DSC1121AI5-125.0038T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	125.0038MHz	2.25 V ~ 3.6 V
DSC1121AL2-020.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	20MHz	2.25 V ~ 3.6 V
DSC1121AL2-025.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1121BI5-050.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	50MHz	2.25 V ~ 3.6 V
DSC1121BI5-100.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1121BI5-125.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1121BM5-030.0000T	Microchip可編程振蕩器	DSC1121	Obsolete	MEMS (Silicon)	30MHz	2.25 V ~ 3.6 V
DSC1121CE5-100.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1121CE5-108.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	108MHz	2.25 V ~ 3.6 V
DSC1121CI2-031.2500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	31.25MHz	2.25 V ~ 3.6 V
DSC1121CL2-020.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	20MHz	2.25 V ~ 3.6 V
DSC1121CL2-024.7500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	24.75MHz	2.25 V ~ 3.6 V
DSC1121CL5-024.7500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	24.75MHz	2.25 V ~ 3.6 V
DSC1121CM1-027.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	27MHz	2.25 V ~ 3.6 V
DSC1121CM2-027.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	27MHz	2.25 V ~ 3.6 V
DSC1121CM2-032.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	32MHz	2.25 V ~ 3.6 V
DSC1121NI1-025.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1121NI1-065.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	65MHz	2.25 V ~ 3.6 V
DSC1122AE1-123.5200T	Microchip晶振	DSC1122	Active	MEMS (Silicon)	123.52MHz	2.25 V ~ 3.6 V
DSC1122AE1-312.5000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	312.5MHz	2.25 V ~ 3.6 V
DSC1122AE2-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122AI1-133.3300T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	133.33MHz	2.25 V ~ 3.6 V
DSC1122AI1-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122AI1-159.3750T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	159.375MHz	2.25 V ~ 3.6 V
DSC1122AI2-025.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1122AI5-375.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	375MHz	2.25 V ~ 3.6 V
DSC1122BE1-025.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1122CE2-150.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	150MHz	2.25 V ~ 3.6 V
DSC1122CI1-155.5200T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1122CI2-148.3516T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1122CI2-148.5000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	148.5MHz	2.25 V ~ 3.6 V
DSC1122CI2-155.5200T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1122CL1-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122NE2-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122NI1-078.1250T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	78.125MHz	2.25 V ~ 3.6 V
DSC1122NI1-133.3300T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	133.33MHz	2.25 V ~ 3.6 V
DSC1123AI2-148.3516T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1123AI2-155.5200T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1123AI2-212.5000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	212.5MHz	2.25 V ~ 3.6 V
DSC1123AI5-110.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	110MHz	2.25 V ~ 3.6 V
DSC1123AL2-125.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1123BE2-100.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1123BE2-125.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1123CE2-062.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	62MHz	2.25 V ~ 3.6 V
DSC1123CE2-148.3516T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1123CE2-148.5000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	148.5MHz	2.25 V ~ 3.6 V
DSC1123CE2-200.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	200MHz	2.25 V ~ 3.6 V

產品特性：低均方根相位抖動:< 1 ps(典型值。)，高穩定性:10、25、50 ppm，工業級:-40攝氏度至85攝氏度，延伸文件系統商用:-20攝氏度至70攝氏度，高電源噪聲抑制:-50dBc，短交貨期:2周，寬頻率。范圍:2.3至460兆赫。2.5毫米x 2.0mm毫米、3.2毫米x 2.5mm毫米、5.0毫米x 3.2mm毫米和7.0毫米x 5.0mm毫米，符合軍用標準883，MTF比石英晶體振蕩器高20倍，低電流消耗，電源電壓范圍為2.25V至3.6V，待機和輸出使能功能，無鉛且符合RoHS標準，提供LVDS和HCSL版本.
應用程序：存儲區域網絡，SATA、SAS、光纖通道，無源光網絡，-EPON，10G-EPON，GPON，10G-GPON 以太網 - 1G、10GBASE-T/KR/LR/SR和FCoE，高清/標清/SDI視頻和監控.